Bipolar Ni/TiO2/HfO2/Ni RRAM with multilevel states and self-rectifying characteristics

Chung Wei Hsu, Tuo-Hung Hou, Mei Chin Chen, I. Ting Wang, Chun Li Lo

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

To be compatible with 3-D vertical crossbar arrays, a TiO 2HfO2 bilayer resistive-switching memory (RRAM) cell sandwiched between Ni electrodes is developed. The proposed device has numerous highly desired features for the implementation of 3-D vertical RRAM, including: 1) stable bipolar resistive switching; 2) forming free; 3) self-compliance; 4) self-rectification; 5) multiple resistance states; and 6) room-temperature process. The resistive switching and current rectification are attributed to oxygen vacancy migration in HfO2 and potential barrier modulation of the asymmetric TiO2HfO2 tunnel barrier. The rectification ratio up to 103 is capable of realizing a single-crossbar array up to 16 Mb for future high-density storage class memory applications.

原文English
文章編號6542651
頁(從 - 到)885-887
頁數3
期刊IEEE Electron Device Letters
34
發行號7
DOIs
出版狀態Published - 17 七月 2013

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