Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee*

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

原文English
頁(從 - 到)1464-1467
頁數4
期刊Ieee Electron Device Letters
42
發行號10
DOIs
出版狀態Published - 10月 2021

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