Bias-dependent radio frequency performance for 40nm inas high-electron-mobility transistor with a cutoff frequency higher than 600GHz

Faiz Fatah; Chien I. Kuo; Heng-Tung Hsu; Che Yang Chiang; Ching Yi Hsu; Yasuyuki Miyamoto; Edward Yi Chang

doi:10.1143/JJAP.51.110203

Bias-dependent radio frequency performance for 40nm inas high-electron-mobility transistor with a cutoff frequency higher than 600GHz

Faiz Fatah^*, Chien I. Kuo, Heng-Tung Hsu, Che Yang Chiang, Ching Yi Hsu, Yasuyuki Miyamoto, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this paper, we present the fabrication and characterization of 40nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (fT) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization.

原文	English
文章編號	110203
期刊	Japanese Journal of Applied Physics
卷	51
發行號	11
DOIs	https://doi.org/10.1143/JJAP.51.110203
出版狀態	Published - 11月 2012

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abstract = "In this paper, we present the fabrication and characterization of 40nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (fT) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization.",

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AU - Fatah, Faiz

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Chiang, Che Yang

AU - Hsu, Ching Yi

AU - Miyamoto, Yasuyuki

AU - Chang, Edward Yi

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AB - In this paper, we present the fabrication and characterization of 40nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (fT) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization.

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Bias-dependent radio frequency performance for 40nm inas high-electron-mobility transistor with a cutoff frequency higher than 600GHz

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