Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Jin Ming Zhang, Ting En Hsieh, Tian-Li Wu, Szu Hao Chen, Shi Xuan Chen, Po Chien Chou, Edward Yi Chang

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.

原文English
主出版物標題24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-4
頁數4
ISBN(電子)9781538617793
DOIs
出版狀態Published - 5 10月 2017
事件24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
持續時間: 4 7月 20177 7月 2017

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
國家/地區China
城市Chengdu
期間4/07/177/07/17

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