BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan; Ming Hung Wu; Hsin Hui Huang; Yu Hao Chen; Yueh Hua Chu; Tian-Li Wu; Po Chun Yeh; Chih Yao Wang; Yu De Lin; Jian Wei Su; Pei Jer Tzeng; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu; Tuo-Hung Hou

doi:10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan, Ming Hung Wu, Hsin Hui Huang, Yu Hao Chen, Yueh Hua Chu, Tian-Li Wu, Po Chun Yeh, Chih Yao Wang, Yu De Lin, Jian Wei Su, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

14 引文斯高帕斯（Scopus）

摘要

An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

原文	English
主出版物標題	2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	4.6.1-4.6.4
頁數	4
ISBN（電子）	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371916
出版狀態	Published - 12 12月 2020
事件	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States 持續時間: 12 12月 2020 → 18 12月 2020

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2020-December
ISSN（列印）	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區	United States
城市	Virtual, San Francisco
期間	12/12/20 → 18/12/20

存取文件

10.1109/IEDM13553.2020.9371916

其它文件與鏈接

Link to publication in Scopus

引用此

Yan, M. H., Wu, M. H., Huang, H. H., Chen, Y. H., Chu, Y. H., Wu, T.-L., Yeh, P. C., Wang, C. Y., Lin, Y. D., Su, J. W., Tzeng, P. J., Sheu, S. S., Lo, W. C., Wu, C. I., & Hou, T.-H. (2020). BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020 (頁 4.6.1-4.6.4). 文章 9371916 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371916

Yan, Meng Hui ; Wu, Ming Hung ; Huang, Hsin Hui 等. / BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 頁 4.6.1-4.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{4315418181ca4320bd20e8ba4d778ccf,

title = "BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability",

abstract = "An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.",

author = "Yan, {Meng Hui} and Wu, {Ming Hung} and Huang, {Hsin Hui} and Chen, {Yu Hao} and Chu, {Yueh Hua} and Tian-Li Wu and Yeh, {Po Chun} and Wang, {Chih Yao} and Lin, {Yu De} and Su, {Jian Wei} and Tzeng, {Pei Jer} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.} and Tuo-Hung Hou",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371916",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "4.6.1--4.6.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "United States",

}

Yan, MH, Wu, MH, Huang, HH, Chen, YH, Chu, YH, Wu, T-L, Yeh, PC, Wang, CY, Lin, YD, Su, JW, Tzeng, PJ, Sheu, SS, Lo, WC, Wu, CI & Hou, T-H 2020, BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371916, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2020-December, Institute of Electrical and Electronics Engineers Inc., 頁 4.6.1-4.6.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. / Yan, Meng Hui; Wu, Ming Hung; Huang, Hsin Hui 等.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 4.6.1-4.6.4 9371916 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

AU - Yan, Meng Hui

AU - Wu, Ming Hung

AU - Huang, Hsin Hui

AU - Chen, Yu Hao

AU - Chu, Yueh Hua

AU - Wu, Tian-Li

AU - Yeh, Po Chun

AU - Wang, Chih Yao

AU - Lin, Yu De

AU - Su, Jian Wei

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Wu, Chih I.

AU - Hou, Tuo-Hung

PY - 2020/12/12

Y1 - 2020/12/12

N2 - An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

AB - An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

UR - http://www.scopus.com/inward/record.url?scp=85102921157&partnerID=8YFLogxK

U2 - 10.1109/IEDM13553.2020.9371916

DO - 10.1109/IEDM13553.2020.9371916

M3 - Conference contribution

AN - SCOPUS:85102921157

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 4.6.1-4.6.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Yan MH, Wu MH, Huang HH, Chen YH, Chu YH, Wu TL 等. BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 4.6.1-4.6.4. 9371916. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

摘要

出版系列

Conference

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