BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan, Ming Hung Wu, Hsin Hui Huang, Yu Hao Chen, Yueh Hua Chu, Tian-Li Wu, Po Chun Yeh, Chih Yao Wang, Yu De Lin, Jian Wei Su, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

原文English
主出版物標題2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面4.6.1-4.6.4
頁數4
ISBN(電子)9781728188881
DOIs
出版狀態Published - 12 12月 2020
事件66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
持續時間: 12 12月 202018 12月 2020

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(列印)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區United States
城市Virtual, San Francisco
期間12/12/2018/12/20

指紋

深入研究「BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability」主題。共同形成了獨特的指紋。

引用此