TY - GEN
T1 - BEOL-Compatible Ferroelectric Capacitor with Excellent Endurance and Retention by Improving Interface Quality
AU - Teng, Li Cheng
AU - Huang, Yu Che
AU - Wang, Shin Yuan
AU - Lin, Yu Hsien
AU - Chien, Chao Hsin
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - In this paper, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 6.5 nm HZO utilizing Molybdenum (Mo) as the electrodes. We propose a novel atomic layer deposition (ALD) scheme to overcome the challenge of oxidation of the bottom Mo electrode. The fabricated sample annealed at 400 °C demonstrated a 2Pr value of 54.3 μ C/cm2 at an operating voltage of 2V, which meets the stringent requirements of Back-End-of-Line (BEOL) integration. Furthermore, in endurance testing, the sample maintained a 2Pr value of 52.2 μ C/cm2 even after 1010 cycles (▵ 2 Pr/2Prpristme≈ 4% from pristine to 1010 cycles).
AB - In this paper, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 6.5 nm HZO utilizing Molybdenum (Mo) as the electrodes. We propose a novel atomic layer deposition (ALD) scheme to overcome the challenge of oxidation of the bottom Mo electrode. The fabricated sample annealed at 400 °C demonstrated a 2Pr value of 54.3 μ C/cm2 at an operating voltage of 2V, which meets the stringent requirements of Back-End-of-Line (BEOL) integration. Furthermore, in endurance testing, the sample maintained a 2Pr value of 52.2 μ C/cm2 even after 1010 cycles (▵ 2 Pr/2Prpristme≈ 4% from pristine to 1010 cycles).
UR - http://www.scopus.com/inward/record.url?scp=85196724592&partnerID=8YFLogxK
U2 - 10.1109/VLSITSA60681.2024.10546363
DO - 10.1109/VLSITSA60681.2024.10546363
M3 - Conference contribution
AN - SCOPUS:85196724592
T3 - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
BT - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024
Y2 - 22 April 2024 through 25 April 2024
ER -