@article{e877cd245c364ec6977c413d2d304e4c,
title = "Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism",
abstract = "In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.",
keywords = "Contact etch-stop layer (CESL), Poly amorphization implantation (PAI), Strain, Stress memorization technique (SMT)",
author = "Liao, {Chia Chun} and Chiang, {Tsung Yu} and Lin, {Min Chen} and Tien-Sheng Chao",
year = "2010",
month = apr,
day = "1",
doi = "10.1109/LED.2010.2041524",
language = "English",
volume = "31",
pages = "281--283",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}