Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Chia Chun Liao*, Tsung Yu Chiang, Min Chen Lin, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.

原文English
文章編號11
頁(從 - 到)281-283
頁數3
期刊IEEE Electron Device Letters
31
發行號4
DOIs
出版狀態Published - 1 4月 2010

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