Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory

Debashis Panda, Firman M. Simanjuntak, Sridhar Chandrasekaran, Bhaskar Pattanayak, Pragya Singh, Tseung-Yuen Tseng*

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The effect of the TiW barrier layer on the switching properties of Ga-doped ZnO (GZO) nanorods based on Electrochemical Metallization Memory is investigated. Vertically wellaligned and uniform GZO nanorods having a diameter of approximately 35 nm are hydrothermally grown on a seeding layer of ZnO deposited on indium tin oxide (ITO) coated glass substrate, to fabricate Cu/TiW/nanorods/ITO/Glass devices. The remarkable enhancement in the memory window (on/off ratio) is achieved in the 5 nm TiW barrier layer embedded device. This device exhibits endurance of more than 103 cycles and a large memory window of ~103. The conduction mechanism at different current regions is studied, and it is found that Schottky emission is dominated in the low field region. The TiW barrier layer helps to retain the Cu ions and control the Cu ions diffusion, hence control the filament growth into the resistive layer, confirmed from the X-ray photoelectron spectroscopy (XPS) analysis. This device is suitable for the future low power non-volatile memory devices.

原文English
文章編號9217940
頁(從 - 到)764-768
頁數5
期刊IEEE Transactions on Nanotechnology
19
DOIs
出版狀態Published - 8 10月 2020

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