Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

G. Ottaviani*, King-Ning Tu, J. W. Mayer

*此作品的通信作者

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109 引文 斯高帕斯(Scopus)

摘要

Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.

原文English
頁(從 - 到)3354-3359
頁數6
期刊Physical Review B
24
發行號6
DOIs
出版狀態Published - 1 1月 1981

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