@inproceedings{328584cbf7134484b8c1476d1c97c6f5,
title = "Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation",
abstract = "Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.",
keywords = "AlInGaN/GaN HEMT, Double barrier, Drift diffusion, Physical models, lattice matched, recess gate, simulation",
author = "Shrestha, {Niraj Man} and Chen, {Chao Hsuan} and Zuo-Min Tsai and Yi-Ming Li and Jenn-Hawn Tarng and Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 ; Conference date: 04-09-2019 Through 06-09-2019",
year = "2019",
month = sep,
doi = "10.1109/SISPAD.2019.8870407",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Francesco Driussi",
booktitle = "Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019",
address = "United States",
}