Bandwidth enhancement techniques for transimpedance amplifier in cmos technologies

Chao Hsin Lu, Wei-Zen Chen

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

This paper describes the design of a wide band CMOS transimpedance amplifier (TIA) for optical receiver application. Implemented in a 0.35-μm digital CMOS process, this amplifier can achieve a transimpedance gain of 54.5dBΩ with 2.5GHz-3 dB bandwidth while dissipating 7.5mA from a 3V supply. Bandwidth extension is achieved by inductive peaking and Gm enhancement techniques. The core circuit of the TIA occupies a chip area of 45 μm × 55 μm only.

原文English
文章編號1471361
頁(從 - 到)174-177
頁數4
期刊European Solid-State Circuits Conference
出版狀態Published - 2001

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