This paper describes the design of a wide band CMOS transimpedance amplifier (TIA) for optical receiver application. Implemented in a 0.35-μm digital CMOS process, this amplifier can achieve a transimpedance gain of 54.5dBΩ with 2.5GHz-3 dB bandwidth while dissipating 7.5mA from a 3V supply. Bandwidth extension is achieved by inductive peaking and Gm enhancement techniques. The core circuit of the TIA occupies a chip area of 45 μm × 55 μm only.
|頁（從 - 到）||174-177|
|期刊||European Solid-State Circuits Conference|
|出版狀態||Published - 1 1月 2001|