Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

D. K. Sengupta*, S. Kim, Hao-Chung Kuo, A. P. Curtis, K. C. Hsieh, S. G. Bishop, M. Feng, G. E. Stillman, S. D. Gunapala, S. V. Bandara, Y. C. Chang, H. C. Liu

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

原文English
頁(從 - 到)385-390
頁數6
期刊Materials Research Society Symposium - Proceedings
525
DOIs
出版狀態Published - 12月 1998
事件Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
持續時間: 13 4月 199815 4月 1998

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