Band-offset determination and excitons in SiGe/Si(001) quantum wells

HH Cheng; ST Yen; RJ Nicholas

doi:10.1103/PhysRevB.62.4638

Band-offset determination and excitons in SiGe/Si(001) quantum wells

HH Cheng^*
, ST Yen
, RJ Nicholas

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.

原文	English
頁（從 - 到）	4638-4641
頁數	4
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	62
發行號	7
DOIs	https://doi.org/10.1103/PhysRevB.62.4638
出版狀態	Published - 15 8月 2000

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title = "Band-offset determination and excitons in SiGe/Si(001) quantum wells",

abstract = "We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3\% is concluded.",

keywords = "SEMICONDUCTOR HETEROSTRUCTURES, SI/SIGE HETEROSTRUCTURES, EDGE PHOTOLUMINESCENCE, GAP PHOTOLUMINESCENCE, SILICON, SUPERLATTICES, ALIGNMENT, ENERGIES, ALLOYS",

author = "HH Cheng and ST Yen and RJ Nicholas",

year = "2000",

month = aug,

day = "15",

doi = "10.1103/PhysRevB.62.4638",

language = "English",

volume = "62",

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TY - JOUR

T1 - Band-offset determination and excitons in SiGe/Si(001) quantum wells

AU - Cheng, HH

AU - Yen, ST

AU - Nicholas, RJ

PY - 2000/8/15

Y1 - 2000/8/15

N2 - We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.

AB - We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.

KW - SEMICONDUCTOR HETEROSTRUCTURES

KW - SI/SIGE HETEROSTRUCTURES

KW - EDGE PHOTOLUMINESCENCE

KW - GAP PHOTOLUMINESCENCE

KW - SILICON

KW - SUPERLATTICES

KW - ALIGNMENT

KW - ENERGIES

KW - ALLOYS

U2 - 10.1103/PhysRevB.62.4638

DO - 10.1103/PhysRevB.62.4638

M3 - Article

SN - 1098-0121

VL - 62

SP - 4638

EP - 4641

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -

Band-offset determination and excitons in SiGe/Si(001) quantum wells

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