摘要
We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 4638-4641 |
| 頁數 | 4 |
| 期刊 | Physical Review B - Condensed Matter and Materials Physics |
| 卷 | 62 |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 15 8月 2000 |