Band-offset determination and excitons in SiGe/Si(001) quantum wells

HH Cheng*, ST Yen, RJ Nicholas

*此作品的通信作者

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13 引文 斯高帕斯(Scopus)

摘要

We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.

原文English
頁(從 - 到)4638-4641
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
62
發行號7
DOIs
出版狀態Published - 15 8月 2000

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