Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

S. Chang*, S. Chattopadhyay, C. Chen, H. Chen, W. Chen, F. Chen, R. Collazo, Z. Sitar

*此作品的通信作者

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

Field emission of electrons from narrow-band-gap and wide-band-gap one-dimensional nanostructures were studied. N-type silicon substrates enhanced the emission from the low-band-gap silicon nanowires and carbon nanotubes, whereas p-type substrates were a better choice for field emission from wide-band-gap silicon carbon nitride nanocrystalline thin films and nanorods. The role of the substrate-nanostructure interface was modeled based on different junction mechanisms to explain, qualitatively, the fundamentally different emission behavior of these nanostructures when n- and p-type silicon substrates were used. The results could be explained on the basis of simple carrier transport across the silicon-silicon nanowire interface and subsequent tunneling of electrons for the silicon nanowires. Schottky barrier theory can explain the better field emission of electrons from the n-type silicon supported carbon nanotubes. The decreased barrier height at the interface of the silicon-silicon carbon nitride heterojunction, when p-type silicon substrate was used, could explain the superior field emission in comparison to when n-type silicon substrates were used.

原文English
期刊Physical Review B - Condensed Matter and Materials Physics
68
發行號12
DOIs
出版狀態Published - 2003

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