Back-end of line compatible transistors for hybrid CMOS applications

Keyphrases

• Amorphous Oxide Thin-film Transistors 33%
• Back-end-of-line 100%
• CMOS Technology 33%
• Downscaling 33%
• Electrical Characteristics 66%
• Gate Insulator 33%
• High Field-effect Mobility 33%
• Hybrid CMOS 100%
• Indium Oxide 33%
• Indium Tungsten Oxide 33%
• Low Temperature 33%
• Low-voltage Operation 66%
• N-channel 66%
• Oxide-based 33%
• P-channel 66%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 66%
• Subthreshold Swing 33%
• Suitable Technology 33%
• Technology Platform 33%
• Thin-film Transistors 33%
• Three-dimensional Integration 33%
• Transistor 100%
• Transparent Amorphous Oxide Semiconductor 33%
• Ultrathin Films 66%

Material Science

• Amorphous Material 33%
• Electrical Property 33%
• Indium 33%
• Oxide Compound 33%
• Oxide Semiconductor 16%
• Thin-Film Transistor 100%
• Transistor 100%
• Tungsten 16%
• Ultrathin Films 33%

Engineering

• Amorphous Oxide 16%
• Channel Device 16%
• Low-Temperature 16%
• Oxide Semiconductor 16%
• Promising Candidate 16%
• Thin-Film Transistor 100%