@inproceedings{7109c66ffe8f471a9c9778269deddb19,
title = "Back-end of line compatible transistors for hybrid CMOS applications",
abstract = "The low-temperature back-end of line (BEOL) compatible transparent amorphous oxide semiconductor (TAOS) TFTs and poly-Si TFTs are the suitable technology platform for three-dimensional (3D) integration hybrid CMOS technologies. The n-channel amorphous indium tungsten oxide (a-IWO) ultra-thin-film transistors (UTFTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO UTFTs with low operation voltages exhibit good electrical characteristics: near ideal subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (FE) ~ 25.3 cm2/V-s. In addition, we also have fabricated the p-channel poly-Si TFTs with high-κ gate insulator (GI). The matched electrical characteristics of n-channel and p-channel devices with low operation voltage and low IOFF are exhibiting the promising candidate for future hybrid CMOS applications.",
author = "Po-Tsun Liu and Kuo, {Po Yi} and Chang, {Chien Min} and Wei, {Hsiu Hsuan} and Wu, {Shih Tse} and Eric Sun",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
doi = "10.1149/09001.0135ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "135--138",
editor = "Yue Kuo",
booktitle = "2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019",
edition = "1",
}