Automatic device model parameter extractions via hybrid intelligent methodology

Cheng Che Liu; Yiming Li; Ya Shu Yang; Chieh Yang Chen; Min Hui Chuang

doi:10.23919/SISPAD49475.2020.9241613

Automatic device model parameter extractions via hybrid intelligent methodology

Cheng Che Liu, Yiming Li^*, Ya Shu Yang, Chieh Yang Chen, Min Hui Chuang

^*此作品的通信作者

電信工程研究所

研究成果: Conference contribution › 同行評審

3 引文斯高帕斯（Scopus）

摘要

We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.

原文	English
主出版物標題	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	355-358
頁數	4
ISBN（電子）	9784863487635
DOIs	https://doi.org/10.23919/SISPAD49475.2020.9241613
出版狀態	Published - 23 9月 2020
事件	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan 持續時間: 3 9月 2020 → 6 10月 2020

出版系列

名字	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
卷	2020-September

Conference

Conference	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
國家/地區	Japan
城市	Virtual, Kobe
期間	3/09/20 → 6/10/20

存取文件

10.23919/SISPAD49475.2020.9241613

其它文件與鏈接

Link to publication in Scopus

引用此

Liu, C. C., Li, Y., Yang, Y. S., Chen, C. Y., & Chuang, M. H. (2020). Automatic device model parameter extractions via hybrid intelligent methodology. 於 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (頁 355-358). 文章 9241613 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; 卷 2020-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD49475.2020.9241613

Liu, Cheng Che ; Li, Yiming ; Yang, Ya Shu 等. / Automatic device model parameter extractions via hybrid intelligent methodology. 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 頁 355-358 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{5645cd19cac24323ba288cbdfa70b54e,

title = "Automatic device model parameter extractions via hybrid intelligent methodology",

abstract = "We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.",

keywords = "Automatic model parameter extraction, Hybrid intelligent methodology, Multiobjective evolutionary algorithms.",

author = "Liu, {Cheng Che} and Yiming Li and Yang, {Ya Shu} and Chen, {Chieh Yang} and Chuang, {Min Hui}",

note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.; 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 ; Conference date: 03-09-2020 Through 06-10-2020",

year = "2020",

month = sep,

day = "23",

doi = "10.23919/SISPAD49475.2020.9241613",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "355--358",

booktitle = "2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020",

address = "United States",

}

Liu, CC, Li, Y, Yang, YS, Chen, CY & Chuang, MH 2020, Automatic device model parameter extractions via hybrid intelligent methodology. 於 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020., 9241613, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 卷 2020-September, Institute of Electrical and Electronics Engineers Inc., 頁 355-358, 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020, Virtual, Kobe, Japan, 3/09/20. https://doi.org/10.23919/SISPAD49475.2020.9241613

Automatic device model parameter extractions via hybrid intelligent methodology. / Liu, Cheng Che; Li, Yiming; Yang, Ya Shu 等.
2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 355-358 9241613 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; 卷 2020-September).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Automatic device model parameter extractions via hybrid intelligent methodology

AU - Liu, Cheng Che

AU - Li, Yiming

AU - Yang, Ya Shu

AU - Chen, Chieh Yang

AU - Chuang, Min Hui

PY - 2020/9/23

Y1 - 2020/9/23

N2 - We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.

AB - We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.

KW - Automatic model parameter extraction

KW - Hybrid intelligent methodology

KW - Multiobjective evolutionary algorithms.

UR - http://www.scopus.com/inward/record.url?scp=85096242467&partnerID=8YFLogxK

U2 - 10.23919/SISPAD49475.2020.9241613

DO - 10.23919/SISPAD49475.2020.9241613

M3 - Conference contribution

AN - SCOPUS:85096242467

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 355

EP - 358

BT - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020

Y2 - 3 September 2020 through 6 October 2020

ER -

Liu CC, Li Y, Yang YS, Chen CY, Chuang MH. Automatic device model parameter extractions via hybrid intelligent methodology. 於 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 355-358. 9241613. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD49475.2020.9241613

Automatic device model parameter extractions via hybrid intelligent methodology

摘要

出版系列

Conference

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其它文件與鏈接

指紋

引用此