Atomic-Scale Phase Transformation in Perovskite LaCoO_x Resistive Switching Memristive Devices

Keyphrases

• Phase Transformation 100%
• Perovskite 100%
• Atomic Scale 100%
• Resistive Switching 100%
• Memristive Devices 100%
• Resistive Random Access Memory (ReRAM) 60%
• Oxygen Ion Migration 40%
• High-resolution Transmission Electron Microscopy (HRTEM) 20%
• Low Power Consumption 20%
• Epitaxial 20%
• X-ray Photoelectron Spectroscopy 20%
• Retention Time 20%
• Memory Device 20%
• High Storage Density 20%
• SrTiO3 Substrate 20%
• Low Resistance State 20%
• High Resistance State 20%
• Transition Metal Oxides 20%
• Valence State 20%
• Memory Application 20%
• Non-volatile Memory 20%
• Nb-doped SrTiO3 20%
• Scanning Transmission Electron Microscopy 20%
• Structural Evolution 20%
• Topotactic Phase Transformation 20%
• Reversible Transition 20%
• Metal Oxide Layers 20%
• LaCoO3 20%
• Ternary Metal Oxides 20%
• Ion Migration Mechanism 20%

Engineering

• Resistive 100%
• Resistive Random Access Memory 60%
• Oxygen Ion 40%
• High Resolution 40%
• Low Power Consumption 20%
• Conductive 20%
• Ray Photoelectron Spectroscopy 20%
• Illustrates 20%
• Oxide Layer 20%
• High Resistance State 20%
• Nonvolatile Memory 20%
• Retention Time 20%
• Random Access Memory Device 20%

Material Science

• Resistive Random-Access Memory 100%
• Density 33%
• X-Ray Photoelectron Spectroscopy 33%
• High-Resolution Transmission Electron Microscopy 33%
• Metal Oxide 33%
• Transition Metal Oxide 33%
• Scanning Transmission Electron Microscopy 33%