Atomic scale depletion region at one dimensional MoSe2 -WSe2 heterointerface

Yu Hsun Chu, Li Hong Wang, Shin Ye Lee, Hou Ju Chen, Po Ya Yang, Christopher J. Butler, Li Syuan Lu, Han Yeh, Wen-Hao Chang, Minn Tsong Lin

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe 2 -WSe 2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices.

原文English
文章編號241601
頁數4
期刊Applied Physics Letters
113
發行號24
DOIs
出版狀態Published - 10 十二月 2018

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