Atomic motion of dopant during interfacial silicide formation

M. Wittmer*, C. Y. Ting, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

原文English
頁(從 - 到)191-195
頁數5
期刊Thin Solid Films
104
發行號1-2
DOIs
出版狀態Published - 17 6月 1983

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