Atomic Layer Deposition Plasma-Based Undoped-HfO₂Ferroelectric FETs for Non-Volatile Memory

Keyphrases

• Undoped 100%
• Non-volatile Memory 100%
• Atomic Layer Deposition 100%
• Ferroelectric Field-effect Transistor (FeFET) 100%
• Undoped HfO2 100%
• Ferroelectric HfO2 66%
• Dopant 33%
• Plasma-enhanced Atomic Layer Deposition (PEALD) 33%
• Orthorhombic Phase 33%
• V(V) 33%
• Effective Approach 33%
• Memory Window 33%
• O2 Plasma 33%
• Storage Characteristics 33%
• Data Retention 33%
• Ferroelectric Phase 33%
• HfO2 Thin Films 33%
• Metal Structure 33%
• Phase Formation 33%
• Metal-ferroelectric-metal 33%
• Remnant Polarization 33%
• Endurance Cycle 33%
• Post Metal Annealing 33%
• Successful Integration 33%

Engineering

• Field Effect Transistor 100%
• Atomic Layer Deposition 100%
• Nonvolatile Memory 100%
• Dopants 25%
• Thin Films 25%
• Effective Approach 25%
• Data Retention 25%
• Phase Formation 25%

Material Science

• Ferroelectric Material 100%
• Field Effect Transistor 100%
• Plasma Deposition 100%
• Doping (Additives) 16%
• Thin Films 16%