@inproceedings{19d2356db89e47388de30f10eaee0805,
title = "Atomic Layer Defect-free Top-down Process for Future Nano-devices",
abstract = "Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.",
author = "Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",
year = "2018",
month = dec,
day = "5",
doi = "10.1109/ICSICT.2018.8565773",
language = "English",
series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",
booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
address = "United States",
}