Atomic intermixing and electronic interaction at the Pd-Si(111) interface

O. Bisi*, King-Ning Tu

*此作品的通信作者

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19 引文 斯高帕斯(Scopus)

摘要

We present a theoretical study of electronic properties of the Pd-Si(111) interface in the early stages of interaction. Three models are considered: a chemisorbed Pd layer on Si, an epitaxial Pd2Si layer on Si, and a near-surface Si layer containing interstitial Pd atoms. By comparing the results of our calculations with the spectroscopic data, we find that the model of mixing interstitial Pd atoms in Si is the most appropriate one. This suggests an interpretation of the interfacial reaction in terms of a precursor state of formation of Pd silicide.

原文English
頁(從 - 到)1633-1636
頁數4
期刊Physical Review Letters
52
發行號18
DOIs
出版狀態Published - 1 1月 1984

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