Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

Artur Useinov*, C. Gooneratne, J. Kosel

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers.

原文English
主出版物標題Magnetism and Magnetic Materials V
發行者Trans Tech Publications Ltd.
頁面145-148
頁數4
ISBN(列印)9783037854365
DOIs
出版狀態Published - 2012
事件5th Moscow International Symposium on Magnetism, MISM 2011 - Moscow, Russian Federation
持續時間: 21 8月 201125 8月 2011

出版系列

名字Solid State Phenomena
190
ISSN(列印)1012-0394

Conference

Conference5th Moscow International Symposium on Magnetism, MISM 2011
國家/地區Russian Federation
城市Moscow
期間21/08/1125/08/11

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