Asymmetric low temperature cu-polymer hybrid bonding with Au passivation layer

Ming Wei Weng, Shan Yu Mao, Demin Liu, Han Wen Hu, Kuan Neng Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study, an asymmetric Cu-polymer hybrid bonding technology was successfully developed at 200 °C, which uses SU-8 for polymer bonding and Au passivation for Cu bonding. The polymer bonding performance was investigated by the analyses of sat, SEM and pulling test, indicating that bonding with the best quality was achieved at 200 °C. With the Au passivation layer capping on the Cu surface, a low temperature Cu-Cu bonding process can be realized at 200 °C. After demonstrating the bonding process with single material, a chip-level hybrid bonding structure was fabricated and bonded successfully. The hybrid bonding interface was observed by the SEM images, showing that both of the metal and polymer region were well bonded. Furthermore, the electrical properties and reliability performance were analyzed by electrical measurements with a modified Kelvin structure and after un-biased highly accelerated stress test for 168 hours. The bonded structure can still maintain excellent electrical property about 10-7 Ω•cm2. Based on the bonding results, this research provides a practical concept for low temperature hybrid bonding in 3D integration.

原文English
主出版物標題VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665419345
DOIs
出版狀態Published - 19 4月 2021
事件2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, 台灣
持續時間: 19 4月 202122 4月 2021

出版系列

名字VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
國家/地區台灣
城市Hsinchu
期間19/04/2122/04/21

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