TY - JOUR
T1 - Asymmetric Low Metal Contamination Ni-Induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors with Low OFF-State Currents for Back-End of Line (BEOL) Compatible Devices Applications
AU - Kuo, Po Yi
AU - Lo, Shao Chi
AU - Wei, Hsiu Hsuan
AU - Liu, Po Tsun
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2020
Y1 - 2020
N2 - In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high- $\kappa $ HfO2 gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility ( $\mu _{\mathrm{ FE}}$ ), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio ( $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low $\text{I}_{\mathrm{ OFF}}$ and low operation voltages make the asymmetric LC-NILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).
AB - In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high- $\kappa $ HfO2 gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility ( $\mu _{\mathrm{ FE}}$ ), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio ( $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low $\text{I}_{\mathrm{ OFF}}$ and low operation voltages make the asymmetric LC-NILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).
KW - backend of line (BEOL)
KW - complementary TFTs (C-TFTs)
KW - HfO₂ gate insulator (GI)
KW - High-κ
KW - low metal contamination (LC)
KW - monolithic three-dimension integrated circuits (3D-ICs)
KW - Ni-induced lateral crystallization (NILC)
KW - poly-Si thin-film transistors (poly-Si TFTs)
UR - http://www.scopus.com/inward/record.url?scp=85096205911&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2020.3030962
DO - 10.1109/JEDS.2020.3030962
M3 - Article
AN - SCOPUS:85096205911
SN - 2168-6734
VL - 8
SP - 1317
EP - 1322
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
M1 - 9223692
ER -