Asymmetric gate capacitance and high frequency characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

Keyphrases

• Dopant 100%
• Bulk MOSFET 100%
• High-frequency Characteristics 100%
• Random Distribution 100%
• Gate Capacitance 100%
• Discrete Dopants 100%
• Asymmetric Gate 100%
• Characteristic Fluctuation 100%
• Capacitance-frequency Characteristics 100%
• Near-source 66%
• Simulation Techniques 33%
• MOSFET 33%
• Device Performance 33%
• 3-dB Bandwidth 33%
• Drain Bias 33%
• 3D-mixed-mode 33%
• Atomistic Simulation 33%
• Random Dopants 33%
• Unity Gain Bandwidth 33%
• Discrete Impurity 33%

Engineering

• Dopants 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Frequency Characteristic 100%
• Statistical Distribution 100%
• Gate Capacitance 100%
• Device Performance 20%
• Mixed Mode 20%
• Drain Bias 20%
• Gain Bandwidth 20%
• Simulation Technique 20%