@inproceedings{b29c5af2f6334b3c9ef9f92b001dbd22,
title = "Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions",
abstract = "We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller variability than that caused by RDDs of the source extension. It could be attributed to the effect of random position of RDDs appearing in the source / drain extensions. Compared to RDDs of the source extension, fluctuations of voltage gain and cut-off frequency of the explored gate-all-around silicon nanowire MOSFET circuit induced by RDDs of the drain extension can be significantly reduced from 24.3% and 20.7% to 0.9% and 2.2%, respectively.",
author = "Sung, {Wen Li} and Yiming Li",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",
year = "2017",
month = nov,
day = "21",
doi = "10.1109/NANO.2017.8117428",
language = "English",
series = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "101--104",
booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
address = "United States",
}