Assessment of thermal impact on performance of metamorphic high-electron-mobility transistors on polymer substrates using flip-chip-on-board technology

Chin Te Wang, Heng-Tung Hsu, Che Yang Chiang, Edward Yi Chang, Wee Chin Lim

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, we have fabricated and characterized an In0:6Ga0:4As metamorphic high-electron-mobility transistor (mHEMT) device packaged using flip-chip-on-board (FCOB) technology. A low-cost polymer substrate was adopted as the carrier for cost-effective purposes. The impact of bonding temperature on the device performance was also experimentally investigated. While the DC performance was not as sensitive, serious degradation in RF performance was observed at high bonding temperature. Such degradation was mainly due to the thermal-mechanical stress resulting from the mismatch in the coefficient of thermal expansion (CTE) between the GaAs chip and the polymer substrate. Quantitative assessment was also performed through equivalent circuit extraction from S-parameter measurements.

原文English
文章編號126701
期刊Applied Physics Express
6
發行號12
DOIs
出版狀態Published - 12月 2013

指紋

深入研究「Assessment of thermal impact on performance of metamorphic high-electron-mobility transistors on polymer substrates using flip-chip-on-board technology」主題。共同形成了獨特的指紋。

引用此