Artificial Neural Network-Based (ANN) Approach for Characteristics Modeling and Prediction in GaN-on-Si Power Devices

Sayeem Bin Kutub, Hong Jia Jiang, Nan Yow Chen, Wen Jay Lee, Chia Yung Jui, Tian Li Wu

研究成果: Conference contribution同行評審

12 引文 斯高帕斯(Scopus)

摘要

This paper reports on the demonstration of the characteristics modeling and prediction in GaN-on-Si power devices (MIS-HEMTs and p-GaN HEMTs) using the artificial neural network (ANN)-based approach. A multi-layer ANN is developed to model the electrical characteristics, e.g., V$_{TH}, {I}_{D} V_{G}$, hysteresis, breakdown characteristics, and time-dependent dielectric breakdown (TDDB), etc. Furthermore, an autoencoder with two ANNs is also developed to reconstruct the device designs based on the specific characteristics. We show that the ANN-based approach is promising for modeling and prediction with multidimensional parameters, further assisting in the optimization for GaN-based devices towards the targeted performance.

原文English
主出版物標題Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面529-532
頁數4
ISBN(電子)9781728148366
DOIs
出版狀態Published - 9月 2020
事件32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria
持續時間: 13 9月 202018 9月 2020

出版系列

名字Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2020-September
ISSN(列印)1063-6854

Conference

Conference32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
國家/地區Austria
城市Virtual, Online
期間13/09/2018/09/20

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