Arsenic-implanted Si layers annealed using a cw Xe arc lamp

C. Drowley*, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.

原文English
頁(從 - 到)876-878
頁數3
期刊Applied Physics Letters
38
發行號11
DOIs
出版狀態Published - 1 12月 1981

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