Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol; H. W. Huang; C. S. Lin; J. K. Sheu; C. J. Tin; Cheng-Huang Kuo; Jin Wei Shi

doi:10.1117/12.808713

Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol^*
, H. W. Huang
, C. S. Lin
, J. K. Sheu
, C. J. Tin
, Cheng-Huang Kuo
, Jin Wei Shi

^*此作品的通信作者

照明與能源光電研究所

研究成果: Conference article › 同行評審

摘要

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of In_xGa _1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

原文	English
文章編號	721629
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	7216
DOIs	https://doi.org/10.1117/12.808713
出版狀態	Published - 5 5月 2009
事件	Gallium Nitride Materials and Devices IV - San Jose, CA, 美國持續時間: 26 1月 2009 → 29 1月 2009

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10.1117/12.808713

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title = "Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes",

abstract = "In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35\% improvement of power performance.",

keywords = "Gallium nitride, Light emitting diode",

author = "Guol, \{Shi Hao\} and Huang, \{H. W.\} and Lin, \{C. S.\} and Sheu, \{J. K.\} and Tin, \{C. J.\} and Cheng-Huang Kuo and Shi, \{Jin Wei\}",

year = "2009",

month = may,

day = "5",

doi = "10.1117/12.808713",

language = "English",

volume = "7216",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Gallium Nitride Materials and Devices IV ; Conference date: 26-01-2009 Through 29-01-2009",

}

TY - JOUR

T1 - Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

AU - Guol, Shi Hao

AU - Huang, H. W.

AU - Lin, C. S.

AU - Sheu, J. K.

AU - Tin, C. J.

AU - Kuo, Cheng-Huang

AU - Shi, Jin Wei

PY - 2009/5/5

Y1 - 2009/5/5

N2 - In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

AB - In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

KW - Gallium nitride

KW - Light emitting diode

UR - https://www.scopus.com/pages/publications/65349160849

U2 - 10.1117/12.808713

DO - 10.1117/12.808713

M3 - Conference article

AN - SCOPUS:65349160849

SN - 0277-786X

VL - 7216

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 721629

T2 - Gallium Nitride Materials and Devices IV

Y2 - 26 January 2009 through 29 January 2009

ER -

Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

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