In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 5 5月 2009|
|事件||Gallium Nitride Materials and Devices IV - San Jose, CA, United States|
持續時間: 26 1月 2009 → 29 1月 2009