TY - JOUR
T1 - ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al 2 O 3 -ZrO 2 -SiO 2 composite thin films for the 65-, 45- and 32-nm technology nodes
AU - Lai, Fu Der
AU - Hua, Jui Ming
AU - Huang, C. Y.
AU - Ko, Fu-Hsiang
AU - Wang, L. A.
AU - Lin, C. H.
AU - Chang, C. M.
AU - Lee, S.
AU - Chern, Gia Wei
PY - 2006/2/21
Y1 - 2006/2/21
N2 - Amorphous (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2)y- (SiO2)1-x-y composite films were prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2) y-(SiO2)1-x-y composite films were completely oxidized when an O2/Ar flow rate ratio of 2.0 was used. The optical constants of these thin films depend linearly on the mole fraction of corresponding films. By tuning the (x, y) mole fractions of (Al 2O3, ZrO2) in the (Al2O 3)x-(ZrO2)y-(SiO2) 1-x-y composite films, the optical constants can meet the optical requirements for a high transmittance attenuated phase shift mask (HT-AttPSM) blank. The n-k values in the quadrangular area in the (x, y) plane, where x and y represent the mole fractions of Al2O3 and ZrO 2, respectively, meet the optical requirements for an HT-AttPSM blank with an optimized transmittance of 20 ± 5% in ArF lithography. It is noted that the quadrangular area is bounded by (0, 0.31), (0, 0.62), (0.26, 0) and (0.57, 0). All the films also met the chemical and adhesion requirements for an HT-AttPSM application. One (Al2O3)0.1- (ZrO2)0.52-(SiO2)0.38 composite film was fabricated with optical properties that meet the optimized optical requirements of ArF-line HT-AttPSM blanks. Combined with these HT-AttPSMs, ArF-line (immersion) lithography may have the potential of reaching 65-, 45-nm and possibly the 32-nm technology nodes for the next three generations.
AB - Amorphous (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2)y- (SiO2)1-x-y composite films were prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2) y-(SiO2)1-x-y composite films were completely oxidized when an O2/Ar flow rate ratio of 2.0 was used. The optical constants of these thin films depend linearly on the mole fraction of corresponding films. By tuning the (x, y) mole fractions of (Al 2O3, ZrO2) in the (Al2O 3)x-(ZrO2)y-(SiO2) 1-x-y composite films, the optical constants can meet the optical requirements for a high transmittance attenuated phase shift mask (HT-AttPSM) blank. The n-k values in the quadrangular area in the (x, y) plane, where x and y represent the mole fractions of Al2O3 and ZrO 2, respectively, meet the optical requirements for an HT-AttPSM blank with an optimized transmittance of 20 ± 5% in ArF lithography. It is noted that the quadrangular area is bounded by (0, 0.31), (0, 0.62), (0.26, 0) and (0.57, 0). All the films also met the chemical and adhesion requirements for an HT-AttPSM application. One (Al2O3)0.1- (ZrO2)0.52-(SiO2)0.38 composite film was fabricated with optical properties that meet the optimized optical requirements of ArF-line HT-AttPSM blanks. Combined with these HT-AttPSMs, ArF-line (immersion) lithography may have the potential of reaching 65-, 45-nm and possibly the 32-nm technology nodes for the next three generations.
KW - Amorphous composite film
KW - ArF-exposure-line lithography
KW - High transmittance attenuated phase shift mask
KW - Optical properties
UR - http://www.scopus.com/inward/record.url?scp=28044466233&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2005.08.382
DO - 10.1016/j.tsf.2005.08.382
M3 - Article
AN - SCOPUS:28044466233
SN - 0040-6090
VL - 496
SP - 247
EP - 252
JO - Thin Solid Films
JF - Thin Solid Films
IS - 2
ER -