Area-Selective Atomic Layer Deposition on Metal/Dielectric Patterns: Amphiphobic Coating, Vaporizable Inhibitors, and Regenerative Processing

Chia Wei Chang, Yu Hsuan Tseng, Chain Shu Hsu*, Jiun Tai Chen*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Area-selective atomic layer deposition (AS-ALD) has drawn significant attention in the past decade because of the potential applications in bottom-up processing, which enables fabricating nanostructures at the atomic level without multiple patterning and lithographic processing that could easily cause alignment issues. Although AS-ALD has been demonstrated using various self-assembled monolayers (SAMs), it is still challenging to develop wet SAM deposition for AS-ALD that is suitable for industrial and semiconductor processes. In this work, we demonstrate highly effective AS-ALD of Al2O3 on Co/SiO2 patterned wafers using fluorinated thiol in both solution and vapor phase. Compared with conventional SAMs using alky-thiols, the fluorinated-thiol SAMs demonstrate greater blocking ability against ALD precursors owing to excellent hydrophobicity. Furthermore, much shorter deposition times can be achieved in vaporizable fluorinated thiol molecules, improving processing throughput and productivity. Most importantly, the SAM regeneration and redosing processes can further enhance the selectivity of AS-ALD, opening a promising avenue to realize the bottom-up approach in practical semiconductor applications.

原文English
頁(從 - 到)28817-28824
頁數8
期刊ACS Applied Materials and Interfaces
15
發行號23
DOIs
出版狀態Published - 14 6月 2023

指紋

深入研究「Area-Selective Atomic Layer Deposition on Metal/Dielectric Patterns: Amphiphobic Coating, Vaporizable Inhibitors, and Regenerative Processing」主題。共同形成了獨特的指紋。

引用此