Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

Tz Shiuan Huang; Po Chun Yeh; Hsin Yun Yang; Yu De Lin; Pei Jer Tzeng; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu; Tuo Hung Hou

doi:10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

Tz Shiuan Huang, Po Chun Yeh, Hsin Yun Yang, Yu De Lin, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo Hung Hou^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

原文	English
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771032
出版狀態	Published - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 台灣持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	台灣
城市	Hsinchu
期間	18/04/22 → 21/04/22

存取文件

10.1109/VLSI-TSA54299.2022.9771032

其它文件與鏈接

Link to publication in Scopus

引用此

Huang, T. S., Yeh, P. C., Yang, H. Y., Lin, Y. D., Tzeng, P. J., Sheu, S. S., Lo, W. C., Wu, C. I., & Hou, T. H. (2022). Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771032

Huang, Tz Shiuan ; Yeh, Po Chun ; Yang, Hsin Yun 等. / Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{541c2ecfe6e946e1bdc44cfcfef2d1fb,

title = "Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing",

abstract = "Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.",

author = "Huang, {Tz Shiuan} and Yeh, {Po Chun} and Yang, {Hsin Yun} and Lin, {Yu De} and Tzeng, {Pei Jer} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771032",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Huang, TS, Yeh, PC, Yang, HY, Lin, YD, Tzeng, PJ, Sheu, SS, Lo, WC, Wu, CI & Hou, TH 2022, Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, 台灣, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. / Huang, Tz Shiuan; Yeh, Po Chun; Yang, Hsin Yun 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

AU - Huang, Tz Shiuan

AU - Yeh, Po Chun

AU - Yang, Hsin Yun

AU - Lin, Yu De

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Wu, Chih I.

AU - Hou, Tuo Hung

PY - 2022

Y1 - 2022

N2 - Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

AB - Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

UR - http://www.scopus.com/inward/record.url?scp=85130478872&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA54299.2022.9771032

DO - 10.1109/VLSI-TSA54299.2022.9771032

M3 - Conference contribution

AN - SCOPUS:85130478872

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Huang TS, Yeh PC, Yang HY, Lin YD, Tzeng PJ, Sheu SS 等. Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

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