Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

Tz Shiuan Huang, Po Chun Yeh, Hsin Yun Yang, Yu De Lin, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo Hung Hou*

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

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