Area-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunction

Wen Chieh Chen, Ming-Dou Ker*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A new on-chip transient detection circuit with superior area efficiency is proposed against the system malfunction resulting from system-level electrostatic discharge (ESD) events. With dual-latched structure, a better area efficiency can be achieved by the reduced time constant inquiry. The proposed transient detection circuit with a silicon area of 40 {\mu }\text{m}\,\,{\times }\,\,60\,\,{\mu }\text{m} has been fabricated in a 0.18-{\mu }\text{m} CMOS process with 1.8-V devices. The detection sensitivity has been successfully verified under ±200 V system-level ESD tests. To achieve the 'Class B' specification of IEC 61000-4-2 standard, the proposed transient detection circuit serves as a safety guard for the system. Through the hardware/firmware co-design, the auto-recovery procedure can be activated by the proposed transient detection circuit sending out a warning signal. With the proposed transient detection circuit co-works with the system program, the immunity level of microelectronic products against the electromagnetic compatibility (EMC) of ESD events can be effectively improved.

原文English
文章編號8686205
頁(從 - 到)363-369
頁數7
期刊IEEE Transactions on Device and Materials Reliability
19
發行號2
DOIs
出版狀態Published - 6月 2019

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