TY - CHAP
T1 - Applications of graphene-based materials in electronic devices
AU - Gupta, Gaurav
AU - Zeng, Minggang
AU - Nurbawono, Argo
AU - Huang, Wen
AU - Liang, Gengchiau
N1 - Publisher Copyright:
© 2016 by Taylor & Francis Group, LLC. All rights reserved.
PY - 2016/5/1
Y1 - 2016/5/1
N2 - Graphene is a forerunner in research on two-dimensional materials and their applications. The large mean-free path, excellent thermal conductance, high mobility, and gapless Dirac bands in graphene mark the unique opportunities and challenges for its adaption for electronic devices. This chapter reviews the theoretical and experimental progress to date in deploying graphene and its variants in pure electronic and spin-hybrid devices. For digital applications, the switching transistors based on field-effect, electro-optics, and tunneling have been considered. The radio-frequency operation of graphene field-effect transistors (FETs) has been appraised for analog applications. The thermal management and suitability for interconnect in integrated circuits has also been discussed. The magnetoresistive devices and the spin analog of traditional electronic devices such as diodes, bipolar junction transistors, FETs, and digital logic have been discussed in this chapter for spintronic applications. The electrical and spintransport driven by thermal nonequilibrium in the absence of an electronic bias across the channel is another important emerging field that has been reviewed in this chapter.
AB - Graphene is a forerunner in research on two-dimensional materials and their applications. The large mean-free path, excellent thermal conductance, high mobility, and gapless Dirac bands in graphene mark the unique opportunities and challenges for its adaption for electronic devices. This chapter reviews the theoretical and experimental progress to date in deploying graphene and its variants in pure electronic and spin-hybrid devices. For digital applications, the switching transistors based on field-effect, electro-optics, and tunneling have been considered. The radio-frequency operation of graphene field-effect transistors (FETs) has been appraised for analog applications. The thermal management and suitability for interconnect in integrated circuits has also been discussed. The magnetoresistive devices and the spin analog of traditional electronic devices such as diodes, bipolar junction transistors, FETs, and digital logic have been discussed in this chapter for spintronic applications. The electrical and spintransport driven by thermal nonequilibrium in the absence of an electronic bias across the channel is another important emerging field that has been reviewed in this chapter.
UR - http://www.scopus.com/inward/record.url?scp=85135385508&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:85052777316
SN - 9781315374093
VL - 4-6
SP - 279
EP - 297
BT - Graphene Science Handbook
PB - CRC Press
ER -