Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

Ta Shan Chang; Ting Chang Chang; Po-Tsun Liu; C. Y. Chiang; S. C. Chen; Feng Sheng Yeh

doi:10.1016/j.tsf.2006.07.053

Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

Ta Shan Chang, Ting Chang Chang^*, Po-Tsun Liu, C. Y. Chiang, S. C. Chen, Feng Sheng Yeh

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光電工程學系

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15 引文斯高帕斯（Scopus）

摘要

In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).

原文	English
頁（從 - 到）	1117-1120
頁數	4
期刊	Thin Solid Films
卷	515
發行號	3
DOIs	https://doi.org/10.1016/j.tsf.2006.07.053
出版狀態	Published - 23 11月 2006

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10.1016/j.tsf.2006.07.053

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title = "Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD",

abstract = "In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).",

keywords = "Low-k, MSZ, Passivation layer, TFTs",

author = "Chang, {Ta Shan} and Chang, {Ting Chang} and Po-Tsun Liu and Chiang, {C. Y.} and Chen, {S. C.} and Yeh, {Feng Sheng}",

year = "2006",

month = nov,

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doi = "10.1016/j.tsf.2006.07.053",

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TY - JOUR

T1 - Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

AU - Chang, Ta Shan

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Chiang, C. Y.

AU - Chen, S. C.

AU - Yeh, Feng Sheng

PY - 2006/11/23

Y1 - 2006/11/23

N2 - In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).

AB - In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).

KW - Low-k

KW - MSZ

KW - Passivation layer

KW - TFTs

UR - http://www.scopus.com/inward/record.url?scp=33750455155&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.07.053

DO - 10.1016/j.tsf.2006.07.053

M3 - Article

AN - SCOPUS:33750455155

SN - 0040-6090

VL - 515

SP - 1117

EP - 1120

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

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