Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.
|出版狀態||Published - 12月 2006|
|事件||13th International Display Workshops, IDW '06 - Otsu, Japan|
持續時間: 6 12月 2006 → 6 12月 2006
|Conference||13th International Display Workshops, IDW '06|
|期間||6/12/06 → 6/12/06|