Application of supercritical fluids for amorphous silicon thin film transistors

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Po Yu Yang

Application of supercritical fluids for amorphous silicon thin film transistors

Chih Tsung Tsai^*, Ting Chang Chang, Po-Tsun Liu, Po Yu Yang

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

Supercritical fluid technology^[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H₂O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

原文	English
頁面	479-480
頁數	2
出版狀態	Published - 12月 2006
事件	13th International Display Workshops, IDW '06 - Otsu, 日本持續時間: 6 12月 2006 → 6 12月 2006

Conference

Conference	13th International Display Workshops, IDW '06
國家/地區	日本
城市	Otsu
期間	6/12/06 → 6/12/06

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "Application of supercritical fluids for amorphous silicon thin film transistors",

abstract = "Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.",

author = "Tsai, {Chih Tsung} and Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Po Yu}",

year = "2006",

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language = "English",

pages = "479--480",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

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T1 - Application of supercritical fluids for amorphous silicon thin film transistors

AU - Tsai, Chih Tsung

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Po Yu

PY - 2006/12

Y1 - 2006/12

N2 - Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

AB - Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

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M3 - Paper

AN - SCOPUS:57649217657

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T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Application of supercritical fluids for amorphous silicon thin film transistors

摘要

Conference

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