Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Yi Li Cheng; Kon Tsu Kin; Fon Shan Huang

doi:10.1149/1.3028217

Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai, Ting Chang Chang^*, Po-Tsun Liu, Yi Li Cheng, Kon Tsu Kin, Fon Shan Huang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

原文	English
頁（從 - 到）	H35-H37
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	12
發行號	2
DOIs	https://doi.org/10.1149/1.3028217
出版狀態	Published - 2009

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@article{6597d676100748bdaf7daa3d74ff2679,

title = "Application of supercritical C O2 fluid for dielectric improvement of Si Ox film",

abstract = "In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.",

author = "Tsai, {Chih Tsung} and Chang, {Ting Chang} and Po-Tsun Liu and Cheng, {Yi Li} and Kin, {Kon Tsu} and Huang, {Fon Shan}",

year = "2009",

doi = "10.1149/1.3028217",

language = "English",

volume = "12",

pages = "H35--H37",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

AU - Tsai, Chih Tsung

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Cheng, Yi Li

AU - Kin, Kon Tsu

AU - Huang, Fon Shan

PY - 2009

Y1 - 2009

N2 - In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

AB - In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

UR - http://www.scopus.com/inward/record.url?scp=57649152985&partnerID=8YFLogxK

U2 - 10.1149/1.3028217

DO - 10.1149/1.3028217

M3 - Article

AN - SCOPUS:57649152985

SN - 1099-0062

VL - 12

SP - H35-H37

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

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