Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors

  • Rajat Butola
  • , Yiming Li*
  • , Sekhar Reddy Kola
  • , Chandni Akbar
  • , Min Hui Chuang
    • *此作品的通信作者

研究成果: Article › 同行評審

5 引文 斯高帕斯（Scopus）

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Keyphrases

Engineering

Computer Science

Material Science

Chemical Engineering