Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors
Rajat Butola, Yiming Li*, Sekhar Reddy Kola, Chandni Akbar, Min Hui Chuang
深入研究「Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors」主題。共同形成了獨特的指紋。