Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles

Howard C.H. Wang; C. C. Wang; C. H. Hsieh; S. Y. Lu; M. C. Chiang; Y. L. Chu; C. J. Chen; T. C. Ong; Ta-Hui Wang; Peter B. Griffin; Carlos H. Diaz

doi:10.1109/IEDM.2001.979403

Antimony assisted arsenic S/D extension (A³ SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles

Howard C.H. Wang^*, C. C. Wang, C. H. Hsieh, S. Y. Lu, M. C. Chiang, Y. L. Chu, C. J. Chen, T. C. Ong, Ta-Hui Wang, Peter B. Griffin, Carlos H. Diaz

^*此作品的通信作者

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A³ SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1μm nMOSFETs. By engineering the defect distributions in the amorphous layer created by indium implant, this new process improves 8% current drive while maintaining the same Ioff. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A³ SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.

原文	English
頁（從 - 到）	63-66
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979403
出版狀態	Published - 2001
事件	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, 美國持續時間: 2 12月 2001 → 5 12月 2001

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10.1109/IEDM.2001.979403

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Wang, H. C. H., Wang, C. C., Hsieh, C. H., Lu, S. Y., Chiang, M. C., Chu, Y. L., Chen, C. J., Ong, T. C., Wang, T.-H., Griffin, P. B., & Diaz, C. H. (2001). Antimony assisted arsenic S/D extension (A³ SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles. Technical Digest - International Electron Devices Meeting, 63-66. https://doi.org/10.1109/IEDM.2001.979403

@article{fa746975be9a4fa4b3011baad158f579,

title = "Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles",

abstract = "We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A3 SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1μm nMOSFETs. By engineering the defect distributions in the amorphous layer created by indium implant, this new process improves 8% current drive while maintaining the same Ioff. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A3 SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.",

author = "Wang, {Howard C.H.} and Wang, {C. C.} and Hsieh, {C. H.} and Lu, {S. Y.} and Chiang, {M. C.} and Chu, {Y. L.} and Chen, {C. J.} and Ong, {T. C.} and Ta-Hui Wang and Griffin, {Peter B.} and Diaz, {Carlos H.}",

year = "2001",

doi = "10.1109/IEDM.2001.979403",

language = "English",

pages = "63--66",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

Wang, HCH, Wang, CC, Hsieh, CH, Lu, SY, Chiang, MC, Chu, YL, Chen, CJ, Ong, TC, Wang, T-H, Griffin, PB & Diaz, CH 2001, 'Antimony assisted arsenic S/D extension (A³ SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles', Technical Digest - International Electron Devices Meeting, 頁 63-66. https://doi.org/10.1109/IEDM.2001.979403

TY - JOUR

T1 - Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs

T2 - IEEE International Electron Devices Meeting IEDM 2001

AU - Wang, Howard C.H.

AU - Wang, C. C.

AU - Hsieh, C. H.

AU - Lu, S. Y.

AU - Chiang, M. C.

AU - Chu, Y. L.

AU - Chen, C. J.

AU - Ong, T. C.

AU - Wang, Ta-Hui

AU - Griffin, Peter B.

AU - Diaz, Carlos H.

PY - 2001

Y1 - 2001

N2 - We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A3 SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1μm nMOSFETs. By engineering the defect distributions in the amorphous layer created by indium implant, this new process improves 8% current drive while maintaining the same Ioff. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A3 SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.

AB - We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A3 SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1μm nMOSFETs. By engineering the defect distributions in the amorphous layer created by indium implant, this new process improves 8% current drive while maintaining the same Ioff. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A3 SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.

UR - http://www.scopus.com/inward/record.url?scp=19244384382&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979403

DO - 10.1109/IEDM.2001.979403

M3 - Conference article

AN - SCOPUS:19244384382

SN - 0163-1918

SP - 63

EP - 66

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

Y2 - 2 December 2001 through 5 December 2001

ER -

Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles

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Antimony assisted arsenic S/D extension (A³ SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles