Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with HfSiON/SiO2 gate stack

Shih Chang Chen*, Chao-Hsin Chien, Jen Chung Lou

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    In this letter, the authors systematically investigated the behavior of negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with HfSiONSi O2 gate stack. They found that typical linear extrapolation does not work well for the lifetime extraction at the normal operation conditions since the polarities of the net trapped charge inside the high- κ dielectrics are not the same at lower and higher stress voltage regimes. In other words, as ∫ Vg ∫ <2.5 V electron trapping dominated while hole trapping dominated when ∫ Vg ∫ >2.5 V. This phenomenon obviously contradicts the essence of the linear prediction in which the same degradation mechanism is assumed through the entire stress voltage range.

    原文English
    文章編號233505
    期刊Applied Physics Letters
    90
    發行號23
    DOIs
    出版狀態Published - 2007

    指紋

    深入研究「Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with HfSiON/SiO2 gate stack」主題。共同形成了獨特的指紋。

    引用此