ANOMALOUS DRAIN CURRENT IN N-MOSFET'S AND ITS SUPPRESSION BY DEEP ION IMPLANTATION.

Hiroyuki Nihira*, Masami Konaka, Hiroshi Iwai, Yoshio Nishi

*此作品的通信作者

研究成果: Paper同行評審

8 引文 斯高帕斯(Scopus)

摘要

Effects of deep ion implantation on the characteristics of the short channel n-MOSFET have been investigated by two-dimensional numerical analysis and verified experimentally. By the analysis, it has been found that the anomalous drain current which flows in the relatively deep region between the source and the drain has been effectively suppressed by the deep ion implantation of acceptor impurities into the channel region. The structure of a short channel n-MOSFET with a deep ion-implanted layer has been optimized by computer simulation to suppress the anomalous drain current. Experimentally, the low and steep subthreshold current characteristics have been obtained by deep ion implantation for short channel n-MOSFETs with L//E//F//F equals 1. 2 mu m. L//E//F//F is the metallurgical channel length. Furthermore, the back gate bias dependence of the threshold voltage of the implanted short channel device can be made almost like that of the unimplanted long channel device. The text of this paper is in digest form.

原文English
頁面487-491
頁數5
DOIs
出版狀態Published - 1978
事件Int Electron Devices Meet (IEDM), 24th, Tech Dig - Washington, DC, USA
持續時間: 4 12月 19786 12月 1978

Conference

ConferenceInt Electron Devices Meet (IEDM), 24th, Tech Dig
城市Washington, DC, USA
期間4/12/786/12/78

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