Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang, Chun Yen Chang, Coming Chen, Jih Wen Chou, Tien-Sheng Chao, Tiao Yuan Huang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

原文English
頁(從 - 到)457-459
頁數3
期刊IEEE Electron Device Letters
21
發行號9
DOIs
出版狀態Published - 九月 2000

指紋

深入研究「Anomalous crossover in Vth roll-off for indium-doped nMOSFETs」主題。共同形成了獨特的指紋。

引用此