Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang, Chun Yen Chang, Coming Chen, Jih Wen Chou, Tien-Sheng Chao, Tiao Yuan Huang

    研究成果: Article同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

    原文English
    頁(從 - 到)457-459
    頁數3
    期刊IEEE Electron Device Letters
    21
    發行號9
    DOIs
    出版狀態Published - 九月 2000

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