Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang; Chun Yen Chang; Coming Chen; Jih Wen Chou; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/55.863110

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang, Chun Yen Chang, Coming Chen, Jih Wen Chou, Tien-Sheng Chao, Tiao Yuan Huang

電子物理學系

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

原文	English
頁（從 - 到）	457-459
頁數	3
期刊	IEEE Electron Device Letters
卷	21
發行號	9
DOIs	https://doi.org/10.1109/55.863110
出版狀態	Published - 9月 2000

存取文件

10.1109/55.863110

其它文件與鏈接

Link to publication in Scopus

引用此

@article{c0c4fd0f08074ffcb137fe4b2d462ca0,

title = "Anomalous crossover in Vth roll-off for indium-doped nMOSFETs",

abstract = "The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.",

author = "Chang, {Sun Jay} and Chang, {Chun Yen} and Coming Chen and Chou, {Jih Wen} and Tien-Sheng Chao and Huang, {Tiao Yuan}",

year = "2000",

month = sep,

doi = "10.1109/55.863110",

language = "English",

volume = "21",

pages = "457--459",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

AU - Chang, Sun Jay

AU - Chang, Chun Yen

AU - Chen, Coming

AU - Chou, Jih Wen

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2000/9

Y1 - 2000/9

N2 - The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

AB - The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

UR - http://www.scopus.com/inward/record.url?scp=0034259665&partnerID=8YFLogxK

U2 - 10.1109/55.863110

DO - 10.1109/55.863110

M3 - Article

AN - SCOPUS:0034259665

SN - 0741-3106

VL - 21

SP - 457

EP - 459

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

摘要

存取文件

其它文件與鏈接

指紋

引用此