Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs

Keyphrases

• Annealing 100%
• Gallium Arsenide 100%
• Temperature Effect 100%
• Annealing Temperature 100%
• Capacitance Dispersion 100%
• Electrical Conduction 100%
• Electrical Capacitance 100%
• Activation Energy 66%
• Current-voltage 33%
• Capacitance Model 33%
• Capacitance Variable Time 33%
• Secondary Ion Mass Spectrometry 33%
• Equivalent Circuit 33%
• Frequency Estimation 33%
• Defect States 33%
• Annealing Behavior 33%
• Deep Traps 33%
• High-temperature Annealing 33%
• High-frequency Capacitance 33%
• Capacitance-frequency 33%
• Variable Range Hopping 33%

Engineering

• Gallium Arsenide 100%
• Annealing Temperature 100%
• Temperature Dependence 100%
• Implanted Sample 100%
• Activation Energy 66%
• Constant Time 33%
• Data Show 33%
• Resistive 33%
• Equivalent Circuit 33%
• Measurement Frequency 33%
• Range Variable 33%

Material Science

• Gallium Arsenide 100%
• Capacitance 100%
• Annealing 60%
• Activation Energy 40%
• Electronic Circuit 20%
• Secondary Ion Mass Spectrometry 20%