Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai Jhih Gan; Po Tsun Liu; Dun Bao Ruan; Yu Chuan Chiu; Simon M. Sze

doi:10.1016/j.vacuum.2020.109630

Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai Jhih Gan, Po Tsun Liu^*, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N₂ annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

原文	English
文章編號	109630
期刊	Vacuum
卷	180
DOIs	https://doi.org/10.1016/j.vacuum.2020.109630
出版狀態	Published - 10月 2020

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10.1016/j.vacuum.2020.109630

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title = "Annealing effects on resistive switching of IGZO-based CBRAM devices",

abstract = "In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.",

keywords = "Annealing treatment, Conductive-bridge random access memory (CBRAM), Indium–gallium–zinc oxide (IGZO), Resistive switching",

author = "Gan, {Kai Jhih} and Liu, {Po Tsun} and Ruan, {Dun Bao} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = oct,

doi = "10.1016/j.vacuum.2020.109630",

language = "English",

volume = "180",

journal = "Vacuum",

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T1 - Annealing effects on resistive switching of IGZO-based CBRAM devices

AU - Gan, Kai Jhih

AU - Liu, Po Tsun

AU - Ruan, Dun Bao

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2020/10

Y1 - 2020/10

N2 - In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

AB - In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

KW - Annealing treatment

KW - Conductive-bridge random access memory (CBRAM)

KW - Indium–gallium–zinc oxide (IGZO)

KW - Resistive switching

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U2 - 10.1016/j.vacuum.2020.109630

DO - 10.1016/j.vacuum.2020.109630

M3 - Article

AN - SCOPUS:85088647163

SN - 0042-207X

VL - 180

JO - Vacuum

JF - Vacuum

M1 - 109630

ER -

Annealing effects on resistive switching of IGZO-based CBRAM devices

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