Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Qun Zhang*, Wei Chiao Chang, Chien Min Chang, Po-Tsun Liu, Han Ping D. Shieh

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.

原文English
主出版物標題2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面334-336
頁數3
ISBN(列印)9781538637111
DOIs
出版狀態Published - 26 7月 2018
事件2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
持續時間: 13 3月 201816 3月 2018

出版系列

名字2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家/地區Japan
城市Kobe
期間13/03/1816/03/18

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