Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Ruofan Fu; Jianwen Yang; Qun Zhang; Wei Chiao Chang; Chien Min Chang; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1109/EDTM.2018.8421476

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Qun Zhang^*, Wei Chiao Chang, Chien Min Chang, Po-Tsun Liu, Han Ping D. Shieh

^*此作品的通信作者

光電工程學系

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm ² /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.

原文	English
主出版物標題	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	334-336
頁數	3
ISBN（列印）	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421476
出版狀態	Published - 26 7月 2018
事件	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan 持續時間: 13 3月 2018 → 16 3月 2018

出版系列

名字	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家/地區	Japan
城市	Kobe
期間	13/03/18 → 16/03/18

存取文件

10.1109/EDTM.2018.8421476

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Link to publication in Scopus

引用此

Fu, R., Yang, J., Zhang, Q., Chang, W. C., Chang, C. M., Liu, P.-T., & Shieh, H. P. D. (2018). Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (頁 334-336). 文章 8421476 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421476

Fu, Ruofan ; Yang, Jianwen ; Zhang, Qun 等. / Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 334-336 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{b7a6d0a783f546f585989cec07b664a8,

title = "Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors",

abstract = " Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade. ",

keywords = "a-IZWO, TFTs and Annealing",

author = "Ruofan Fu and Jianwen Yang and Qun Zhang and Chang, {Wei Chiao} and Chang, {Chien Min} and Po-Tsun Liu and Shieh, {Han Ping D.}",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421476",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "334--336",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "United States",

note = "2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

}

Fu, R, Yang, J, Zhang, Q, Chang, WC, Chang, CM, Liu, P-T & Shieh, HPD 2018, Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421476, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 334-336, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421476

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors. / Fu, Ruofan; Yang, Jianwen; Zhang, Qun 等.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 334-336 8421476 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

AU - Fu, Ruofan

AU - Yang, Jianwen

AU - Zhang, Qun

AU - Chang, Wei Chiao

AU - Chang, Chien Min

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2018/7/26

Y1 - 2018/7/26

N2 - Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.

AB - Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.

KW - a-IZWO

KW - TFTs and Annealing

UR - http://www.scopus.com/inward/record.url?scp=85051457672&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421476

DO - 10.1109/EDTM.2018.8421476

M3 - Conference contribution

AN - SCOPUS:85051457672

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 334

EP - 336

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Fu R, Yang J, Zhang Q, Chang WC, Chang CM, Liu PT 等. Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 334-336. 8421476. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421476

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

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